t4 - lds - 0192 - 1, rev . 1 (111684) ?2011 microsemi corporation page 1 of 6 2n3418s thru 2n3421s available on commercial versions npn med iu m power silicon transistor qualified per mil -prf- 19500/393 qualified levels : jan, jantx and jantxv description this family of high - fr equency, epitaxial planar transistors feature low saturation voltage. these devices are also available in to - 5 and low profile u4 packages. microsemi also offers numerous other transistor products to meet higher and lower power ratings with var ious swi tching speed requirements in both through - hole and surface - mount packages. to - 39 (to - 205ad) package also available in : to - 5 package (leaded) 2n3418 C 2n3421 u4 package (su rface mount) 2n3418u4 C 2n3421u 4 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n3418 th rough 2n3421 series. ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/393. ? rohs compliant versions available (commercial grade only) . ? v ce (sat) = 0.25 v @ ic = 1 a. ? rise time t r = 0.22 s m ax @ i c = 1.0 a, i b1 = 100 ma . ? fall time t f = 0 .20 s m ax @ i c = 1.0 a, i b2 = - 10 0 ma . applications / benefits ? general purpose transistors for medium power applications requiring high frequency switching and low package profile. ? military and other high - reliability applications. m axim um ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol 2n3418 s 2n3420 s 2n3419 s 2n3421 s unit collector - emitter voltage v ceo 60 80 v collector - base voltage v cbo 85 125 v emitter - base voltage v ebo 8 v collector current tp <= 1 ms, d uty c ycle <= 50% i c 3 5 a total power dissipation @ t a = +25 c (1) @ t c = +100 c (2) p d 1 5 w operating & storage junction temperature range t j , t stg - 65 to +200 c notes : 1. derate linearly 5.72 mw/c for t a > +25 c. 2. derate linearly 150 mw/c for t c > +100 c. downloaded from: http:///
t4 - lds - 0192 - 1, rev . 1 (111684) ?2011 microsemi corporation page 2 of 6 2n3418s thru 2n3421s mechanical and packaging ? case: hermetically seale d, k ovar base, n ickel cap. ? marking: part number, d ate c ode, m anufacturers id. ? polarity: see p ackage d imensions on last page. part nomenclature jan 2n3418 s (e3) reliability level jan = jan level jantx = j antx level jantxv = jantxv level blank = commercial jedec type number (see electrical characteristic s table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant short - leaded p ackage symbols & definitions symbol definition c obo c ommon - base open - circuit output capacitance . i ceo c ollector cutoff current, base open . i cex c ollector cutoff current, circuit between base and emitter . i ebo e mitter cutoff curren t, collector open . h fe c ommon - emitter static forward current transfer ratio . t a a mbient temperature, free - air temperature . v ceo c ollector - emitter voltage, base open . v cbo c ollector - emitter voltage, emitter open . v ebo e mitter - base voltage, collector op en . downloaded from: http:///
t4 - lds - 0192 - 1, rev . 1 (111684) ?2011 microsemi corporation page 3 of 6 2n3418s thru 2n3421s electrical characteristics (t a = +25c, unless otherwise noted) off character is tics parameters / test conditions symbol min. max. unit collector - emitter breakdown current v (br)ceo v i c = 50 ma, i b = 0 2n3418 s , 2n3420s 2n3419 s , 2n3421s 60 80 collector - emitter cutoff current i cex 0.3 0.3 a v be = - 0.5 v, v ce = 80 v v be = - 0.5 v, v ce = 120 v 2n3418 s , 2n3420 s 2n3419 s , 2n3421 s collector - base cutoff current v ce = 45 v, i b = 0 v ce = 60 v, i b = 0 2n3418 s , 2n3420 s 2n3419 s , 2n3421 s i ceo 5.0 5.0 a emitter - base cutoff current v eb = 6.0 v, i c = 0 v eb = 8.0 v, i c = 0 i ebo 0.5 10 a on character is tics (1) parameters / test conditions symbol min. max. unit forward - current transfer ratio h fe i c = 100 ma, v ce = 2.0 v 2n3418 s , 2n 3419 s 2n3420s , 2n3421s 20 40 i c = 1.0 a, v ce = 2.0 v 2n3418 s , 2n3419 s 2n3420s , 2n3421s 20 40 60 120 i c = 2.0 a, v ce = 2.0 v 2n3418 s , 2n3419 s 2n3420s , 2n3421s 15 30 i c = 5.0 a, v ce = 5.0 v 2n3418 s , 2n3419 s 2n3420s , 2n3421s 10 15 collector - emitter saturation voltage v ce(sat) v i c = 1.0 a, i b = 0.1 a i c = 2.0 a, i b = 0.2 a 0.25 0.5 base - emitter saturation voltage i c = 1.0 a, i b = 0.1 a i c = 2.0 a, i b = 0.2 a v be(sat) 0.6 0.7 1.2 1.4 v dynamic characteristics parameters / test cond itions symbol min. max. unit magnitude of common emitter small - signal short circuit forward current transfer ratio |h fe | 1.3 0.8 i c = 0.1 a, v ce = 10 v, f = 20 mhz output capacitance c obo pf v cb = 10 v, i e = 0, 100 khz f 1.0 mhz 150 n otes: (1) pulse test: pulse width = 300 s, duty cycle 2.0% . downloaded from: http:///
t4 - lds - 0192 - 1, rev . 1 (111684) ?2011 microsemi corporation page 4 of 6 2n3418s thru 2n3421s electrical characteristics (t a = +25c, unless otherwise noted) continued switching characteristics parameters / test conditions (for all symbols) symbol min. max. unit delay time rise time v be(off) = - 3.7 v, i c = 1.0 a, i b1 = 100 ma t d t r 0.08 0.22 s storage time fall time v be(off) = - 3.7 v , i c = 1.0 a, i b2 = - 100 ma t s t f 1.10 0.20 s turn - off time v be(off) = - 3.7 v , i c = 1.0 a, i b2 = - 100 ma, r l = 20 ? t off 1.20 s safe operating area (see graph below and reference mil - std - 750, method 3053 ) dc test t c = + 100 c, 1 cycle, t > 1.0 s test 1 v ce = 5.0 v, i c = 3.0 a test 2 v ce = 37 v, i c = 0.4 a test 3 v ce = 60 v, i c = 0.185 a v ce = 80 v, i c = 0.12 a 2n3418 s , 2n3420 s 2n3419 s , 2n3421 s clamped switching t a = + 25 c, i b = 0.5 a, i c = 3.0 a collector to emitter voltage v ce (volts) maximum safe operating area (continuous dc) collec tor current i c (amperes) downloaded from: http:///
t4 - lds - 0192 - 1, rev . 1 (111684) ?2011 microsemi corporation page 5 of 6 2n3418s thru 2n3421s graphs t c ( o c ) (case) figure 1 temperature - power derating curve notes: thermal resistance junction to case = 4.5 o c/w max fi nis h - alloy temp = 175.0 o c time (s) figure 2 maximum thermal impedance not e: t c = +25 c, thermal resistance r jc = 4.5 c/w dc operation maximum rating (w) theta ( o c /w) downloaded from: http:///
t4 - lds - 0192 - 1, rev . 1 (111684) ?2011 microsemi corporation page 6 of 6 2n3418s thru 2n3421s package dimensions 1. dimensio ns are i n i nc hes. 2. millimeters are given for general inf ormation only. 3. symbol tl is measured from hd maximum. 4. details of outline in this zone are optional. 5. symbol cd shall not vary more than .010 inch (0.25 mm) in zone p. this z one is controlled for automatic handling. 6. leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) - .000 inch (0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of tp relative to tab. device may be measured by direct methods or by gauge. 7. symbol lu applies between l1 and l2. dimension ld applies between l2 and ll mini mum. diameter is uncontrolled in l1 and beyond ll minimum. 8. lead number 3 is electrically connected to case. 9. beyond r maximum, tw shall be held for a minimum length of .021 inch (0.53 m m). 10. lead number 4 omitted on this variation. 11. symbol r applied to both inside corners of tab. 12. for transistor types 2n3418s, 2n3419s, 2n3420s, 2n3421s, ll is .500 (12.70 mm) min imum and .750 (19.05 mm) maximum. 13. in accordance with asme y14.5m, diameters are equivalent to x symbology. 14. lead 1 is emitter, lead 2 is base, and lead 3 is collector. dimensions symbol inches millimeters note min max min max cd .305 .335 7.75 8.51 ch .240 .260 6.10 6.60 hd .335 .370 8.51 9.40 lc .200 tp 5.08 tp 6 ld .016 .021 0.41 0.53 ll .500 .750 12.7 19.05 7 lu see notes 7, 13, 14 l 1 .050 1.27 7 l 2 .250 6.35 7 p .100 2.54 5 q .040 1.02 4 tl .029 .045 0.74 1.14 3, 10 tw .028 .034 0.71 .86 9, 10 r .010 0.25 11 45 tp 45 tp 6 downloaded from: http:///
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